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Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

Published online by Cambridge University Press:  10 February 2011

A. Halimaoui ,
E. Henrisey ,
C. Hernandez ,
J. Martins ,
M. Paoli ,
M. Regache ,
L. Vallier ,
D. Bensahel ,
B. Blanchard  and
D. Rouchon
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A. Halimaoui
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
E. Henrisey
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
C. Hernandez
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
J. Martins
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
M. Paoli
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
M. Regache
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
L. Vallier
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
D. Bensahel
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
B. Blanchard
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
D. Rouchon
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
F. Martin
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
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Abstract

Direct nitridation of the silicon substrate using gaseous NO at 550–700°C, 10 mbar is studied using physical (SIMS, TEM, XPS) and electrical characterisations. The nitrogen profile can be tailored for the fabrication of thin nitrided oxides as in the case of implanted nitrogen. Degradation of the I(V) characteristics has been evidenced when the nitrogen amount increases.

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References

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