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Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation

Published online by Cambridge University Press:  21 February 2011

D. Bahnck ,
J. L. Batstone  and
Julia M. Phillips
D. Bahnck
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Techniques for the preparation of specimens for Transmission Electron Microscopy analysis are described. Cross-sectional specimens of insulator/semiconductor heterostructures have been successfully prepared. The problem of differential thinning rates and interface amorphization during argon ion-milling have been overcome using low argon ion accelerating voltages and shallow angles of incidence. Techniques for preparation of plan view specimens include the preparation of silicon substrates for in-situ crystal growth in an ultrahigh vacuum Transmission Electron Microscope.

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References

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