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TEM and SEM Studies of Multiple Silicon on Insulator Films for Three Dimensional Circuits.

Published online by Cambridge University Press:  28 February 2011

D.A. Williams ,
R.A. McMahon ,
H. Ahmed ,
K.M. Barfoot ,
D.J. Godfrey ,
B. Dunne  and
A. Mathewson
D.A. Williams
Affiliation:
Microelectronics Research Laboratory, Department of Physics, Cambridge University, Cambridge Science Park, Milton Road, Cambridge. CB4 4FW. U.K.
R.A. McMahon
Affiliation:
Microelectronics Research Laboratory, Department of Physics, Cambridge University, Cambridge Science Park, Milton Road, Cambridge. CB4 4FW. U.K.
H. Ahmed
Affiliation:
Microelectronics Research Laboratory, Department of Physics, Cambridge University, Cambridge Science Park, Milton Road, Cambridge. CB4 4FW. U.K.
K.M. Barfoot
Affiliation:
G.E.C. Research Ltd., Hirst Research Centre, East Lane, Wembley. HA9 7PP. U.K.
D.J. Godfrey
Affiliation:
G.E.C. Research Ltd., Hirst Research Centre, East Lane, Wembley. HA9 7PP. U.K.
B. Dunne
Affiliation:
National Microelectronics Research Centre, University College, Cork, Republic of Ireland.
A. Mathewson
Affiliation:
National Microelectronics Research Centre, University College, Cork, Republic of Ireland.
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Abstract

Multiple layers of silicon on insulator have been recrystallized using a dual electron beam technique. The aim of the investigations was to produce structures suitable for three dimensional circuit applications, and so a number of strategies have been used, providing a range of opportunities for such applications. In particular, two layers of silicon on insulator have been recrystallized simultaneously, and also a second layer has been recrystallized, seeded from a previously regrown film.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 235
Copyright
Copyright © Materials Research Society 1988

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References

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