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Tem Study of Defects In CdTe/CdMnTe Superlattices on (100) InSb

Published online by Cambridge University Press:  21 February 2011

S.J. Diamond ,
J.W. Steeds ,
D. Ashenford  and
B. Lunn
S.J. Diamond
Affiliation:
Bristol University, Department of Physics, Tyndall Ave., Bristol BS8 ITL, UK
J.W. Steeds
Affiliation:
Bristol University, Department of Physics, Tyndall Ave., Bristol BS8 ITL, UK
D. Ashenford
Affiliation:
Hull University Department of Engineering and Computing, Cottingham Rd., Hull, UK
B. Lunn
Affiliation:
Hull University Department of Engineering and Computing, Cottingham Rd., Hull, UK
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Abstract

CdTe/Cd1−xMnx Te superlattices with well/barrier thicknesses ranging from 20Å to 300Å were examined via plan and cross section TEM in analytical instruments capable of EDX and CL. Misfit dislocations, inclined dislocations and stacking faults were observed with a net density of around 109cm−2.

It was observed that the dislocations originated near the substrate/epilayer interface and that stacking faults appeared preferrentially on the pair of {111}B (tellurium terminated) planes in the growth direction rather than on the {111}A planes.

It is suggested that this is due to a difference in mobility between a and P dislocations originating at or near the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 437
Copyright
Copyright © Materials Research Society 1990

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References

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