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Temperature Dependence of Implantation Damage in Strained-Layer Superlattices

Published online by Cambridge University Press:  25 February 2011

D. R. Myers ,
G. W. Arnold ,
L. R. Dawson ,
R. M. Biefeld ,
C. R. Hills  and
B. L. Doyle
D. R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G. W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
L. R. Dawson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. M. Biefeld
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. R. Hills
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. L. Doyle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices for silicon implants at 80 K, 300 K or 673 K at fluences sufficient to induce compositional disordering of the superlattice layers. Implants at low temperatures (80 K for the (InGa)As/GaAs system, 300 K and below in the Ca(AsP)/GaP system) are characterized by well-defined amorphous layers at depths consistent with the predictions of ion range codes. Implants at higher temperatures are characterized by greatly reduced damage levels with substantial densities of extended defects located near the mean ion range. Point defect clusters are preferentially located in the ternary layers in the (InGa)As/GaAs SLS at the deepest part of the implanted zone. Despite the absence of amorphous layer formation, precipitous stress relief still occurs for the Si-implanted (InGa)As/GaAs SLS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 187
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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