Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T03:33:00.677Z Has data issue: false hasContentIssue false

Texture Analysis of Al and Cu Metallization Materials Using Orientation Imaging Microscopy

Published online by Cambridge University Press:  10 February 2011

D. T. Carpenter
Affiliation:
Department of MS&E, Lehigh University, Bethlehem, PA 18015
R. Alvis
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088
G. Morales
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088
Get access

Abstract

X-ray diffraction (XRD) is generally used to measure crystallographic texture, but complete analysis is rarely performed. Orientation imaging microscopy (OIM) gives similar data by electron diffraction and has potential for widespread use since it may be added to any scanning electron microscope. Analysis software has been developed to reduce QIM results into a form which may be compared directly to XRD results. OIM texture parameters measured from Al films showed good quantitative agreement with XRD parameters, however the texture in Cu films is more complex and difficult to compare. Although subject to certain limitations, OIM has several advantages over XRD including more efficient data collection, better sensitivity to minor texture components, and more flexible data analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vaidya, S. and Sinha, A. K., Thin Solid Films 75, p. 253 (1981)10.1016/0040-6090(81)90404-1Google Scholar
2. Knorr, D. B., Tracy, D. P. and Rodbell, K. P., Appl. Phys. Lett. 59, p. 3241 (1991)10.1063/1.105745Google Scholar
3. Knorr, D. B. and Lu, T.-M., Appl. Phys. Lett. 54, p. 2210 (1989)10.1063/1.101126Google Scholar
4. Bunge, H. J., “Mathematische Methoden der Texturanalyse” (Akademie-Verlag, Berlin, 1969)Google Scholar
5. Schultz, L. G., J. Appl. Phys. 20, p. 1030 (1949)10.1063/1.1698268Google Scholar
6. Chernock, W. P. and Beck, P. A., J. Appl. Phys. 23, p. 341 (1952)10.1063/1.1702204Google Scholar
7. Dingley, D. J. and Randle, V., J. Mat. Sci. 27, p. 4545 (1992)10.1007/BF01165988Google Scholar
8. Field, D. P., Sanchez, J. E. Jr., Besser, P. R., and Dingley, D. J., J. Appl. Phys. 82, p. 2383 (1997)10.1063/1.365763Google Scholar
9. Tracy, D. P. and Knorr, D. B., J. Elec. Mater. 22, p. 611 (1993)10.1007/BF02666406Google Scholar