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Theimddynamically Stable Metal / III-V Compound-Semiconductor Interfaces

Published online by Cambridge University Press:  26 February 2011

R. Stanley Williams ,
Jeffrey R. Lince ,
Thomas C. Tsai  and
John H. Pugh
R. Stanley Williams
Affiliation:
Department of Chemistry & Biochemistry and Solid State Sciences CenterUniversity of California, Los Angeles, CA 90024
Jeffrey R. Lince
Affiliation:
Aerospace Corporation, 2350 E. El Segundo Blvd., El Segundo, CA 90245
Thomas C. Tsai
Affiliation:
Department of Chemistry & Biochemistry and Solid State Sciences CenterUniversity of California, Los Angeles, CA 90024
John H. Pugh
Affiliation:
Department of Chemistry & Biochemistry and Solid State Sciences CenterUniversity of California, Los Angeles, CA 90024
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Abstract

Chemical reactions that occur at a metal/III-V compound-semiconductor interface should be minimized if the change in Gibbs free energy of the bulk materials with respect to any possible reaction products is positive. However, the large positive change in entropy caused by vaporization of the highly volatile group V elements is a very important contribution to the Gibbs free energy of these systems, especially at higher temperatures. Thus, a particular metal/III-V compound-semiconductor interface may be thermody-namically stable at one temperature, but unstable with respect to sublimation of elemental group V species at a higher temperature if the enthalpy change for the reaction is positive. Examination of bulk phase diagrams makes it possible to rationalize the reaction products observed and to predict which will be the most stable interface for any particular metal/III-V system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 335
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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