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Theoretical and Experimental Investigation of Thermal Stability of HfO2/Si and HfO2/SiO2 Interfaces

Published online by Cambridge University Press:  01 February 2011

Chun-Li Liu ,
Matt Stoker ,
Rama I. Hegde ,
Raghaw S. Rai  and
Philip J. Tobin
Chun-Li Liu
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Matt Stoker
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Rama I. Hegde
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Raghaw S. Rai
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Philip J. Tobin
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
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Abstract

The assessment of the thermal stability across HfO2/Si and HfO2/SiO2 interfaces has been difficult due to lack of thermodynamic data. In this paper, we present the results of thermodynamic calculations intended to fill this gap. A thermodynamic model was developed by assuming that HfSiO4 is an ideal solution of HfO2 and SiO2 to a first order approximation. The theoretical results predict that the HfO2/Si interface is thermodynamically stable up to 1100°C, while the HfO2/SiO2 interface is thermodynamically unstable even at room temperature. Our experimental results from TEM and XPS analysis are consistent with these modeling predictions.

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