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Theoretical and Experimental Investigation of Thermal Stability of HfO2/Si and HfO2/SiO2 Interfaces

Published online by Cambridge University Press:  01 February 2011

Chun-Li Liu ,
Matt Stoker ,
Rama I. Hegde ,
Raghaw S. Rai  and
Philip J. Tobin
Chun-Li Liu
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Matt Stoker
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Rama I. Hegde
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Raghaw S. Rai
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
Philip J. Tobin
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202
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Abstract

The assessment of the thermal stability across HfO2/Si and HfO2/SiO2 interfaces has been difficult due to lack of thermodynamic data. In this paper, we present the results of thermodynamic calculations intended to fill this gap. A thermodynamic model was developed by assuming that HfSiO4 is an ideal solution of HfO2 and SiO2 to a first order approximation. The theoretical results predict that the HfO2/Si interface is thermodynamically stable up to 1100°C, while the HfO2/SiO2 interface is thermodynamically unstable even at room temperature. Our experimental results from TEM and XPS analysis are consistent with these modeling predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 731: Symposium W – Modeling and Numerical Simulation of Materials Behavior and Evolution , 2002 , W5.2
Copyright
Copyright © Materials Research Society 2002

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