Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-08T04:23:40.102Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical Limits on the Minimal Switching Field and the Switching Current in Magnetization Reversal

Published online by Cambridge University Press:  26 February 2011

Xiangrong Wang  and
Zhouzhou Sun
Xiangrong Wang
Affiliation:
phxwan@ust.hk, Hong Kong University of Science and Technology, Department of Physics, Clear Water Bay, Kowloon, Hong Kong, NY, HKUST, China, People's Republic of, +852-2358-7488, +852 2358 1652
Zhouzhou Sun
Affiliation:
phzzsun@cityu.edu.hk, City University of Hong Kong, Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, Hong Kong SAR, China, People's Republic of
Get access

Abstract

Recent theoretical limits of the minimal switching field and current for uniaxial magnetic nano-structures are reviewed. The results include also the optimal field and current pulses for the fastest magnetization reversal. Contrary to the general belief, the precessional magnetization reversal is not the fastest one, and its critical switching field is neither the lowest one.

Keywords

magnetic propertiesnanostructurespintronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1032: Symposium I – Nanoscale Magnetic Materials and Applications , 2007 , 1032-I01-05
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stoner, E. C. and Wohlfarth, E. P., Phil. Trans. Roy. Soc. London A240, 599 (1948).10.1098/rsta.1948.0007Google Scholar
2. Spin Dynamics in Confined Magnetic Structures I & II (eds Hillebrands, B. and Ounadjela, K.),(Springer, Berlin, 2001).Google Scholar
3. Sun, S. H., Murray, C. B., Weller, D., Folks, L., and Moser, A., Science 287, 1989 (2000).10.1126/science.287.5460.1989Google Scholar
4. Pan, M. H., Liu, H., Wang, J. Z., Jia, J. F., Xue, Q. K., Li, J. L., Qin, S., Mirdaidov, U. M., Wang, X. R., Market, J. T., Zhang, Z. Y., and Shih, C. K., Nano Letters 5, 87(2005).10.1021/nl048295sGoogle Scholar
5. Hou, Y., Sun, S., Rong, C., and Liu, J. P., Appl. Phys. Lett. 91, 153117 (2007); Y. I. Wang, Y. Li, C. Rong, and J. P. Liu, Nanotechnology 18, 465701 (2007); Y. Hou, Z. Xu, S. Peng, C. Rong, J. P. Liu, and S. Su, Advanced Materials 19, 3349 (2007).10.1063/1.2799170Google Scholar
6. He, L. and Doyle, W. D., J. Appl. Phys. 79, 6489 (1996).Google Scholar
7. Acremann, Y., Back, C. H., Buess, M., Portmann, O., Vaterlaus, A., Pescia, D., and Melchior, H., Science 290, 492 (2000).10.1126/science.290.5491.492Google Scholar
8. Hiebert, W. K., Stankiewicz, A., and Freeman, M. R., Phys. Rev. Lett. 79, 1134 (1997).Google Scholar
9. Crawford, T. M., Silva, T. J., Teplin, C. W., and Rogers, C. T., Appl. Phys. lett. 74, 3386 (1999).Google Scholar
10. Sun, Z. Z. and Wang, X. R., Phys. Rev. B71, 174430 (2005); ibid 73, 092416 (2006); ibid 74, 132401 (2006).Google Scholar
11. Back, C. H., Weller, D., Heidmann, J., Mauri, D., Guarisco, D., Garwin, E. L., and Siegmann, H. C., Phys. Rev. Lett. 81, 3251 (1998); C. H. Back, R. Allenspach, W. Weber, S. S. P. Parkin, D. Weller, E. L. Garwin, and H. C. Siegmann, Science 285, 864 (1999).10.1103/PhysRevLett.81.3251Google Scholar
12. Schumacher, H. W., Chappert, C., Crozat, P., Sousa, R. C., Freitas, P. P., Miltat, J., Fassbender, J., and Hillebrands, B., Phys. Rev. Lett. 90, 017201 (2003); H. W. Schumacher, C. Chappert, R. C. Sousa, P. P. Freitas, and J. Miltat, Phys. Rev. Lett. 90, 017204 (2003).10.1103/PhysRevLett.90.017201Google Scholar
13. Xiao, D., Tsoi, M., and Niu, Q., J. Appl. Phys. 99, 013903 (2006).10.1063/1.2161421Google Scholar
14. Sun, Z. Z. and Wang, X. R., Phys. Rev. Lett. 97, 077205 (2006).10.1103/PhysRevLett.97.077205Google Scholar
15. Slonczewski, J. C., J. Magn. Magn. Mater. 159, L1 (1996).10.1016/0304-8853(96)00062-5Google Scholar
16. Berger, L., Phys. Rev. B54, 9353 (1996).10.1103/PhysRevB.54.9353Google Scholar
17. Tsoi, M., Jansen, A. G. M., Bass, J., Chiang, W.-C., Seck, M., Tsoi, V., and Wyder, P., Phys. Rev. Lett. 80, 4281 (1998).10.1103/PhysRevLett.80.4281Google Scholar
18. Myers, E. B., Ralph, D. C., Katine, J. A., Louie, R. N., and Buhrman, R. A., Science 285, 867 (1999).10.1126/science.285.5429.867Google Scholar
19. Sun, J., J. Magn. Magn. Mater. 202, 157 (1999); Nature 425, 359 (2003); Phys. Rev. B62, 570 (2000).10.1016/S0304-8853(99)00289-9Google Scholar
20. Wang, X. R. and Sun, Z. Z., Phys. Rev. Lett. 98, 077201 (2007).10.1103/PhysRevLett.98.077201Google Scholar
21. Vomir, M., Andrade, L. H. F., Guidoni, L., Beaurepaire, E., and Bigot, J.-Y., Phys. Rev. Lett. 94, 237601 (2005).10.1103/PhysRevLett.94.237601Google Scholar