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Theoretical Methods for Calculating Electronic Properties of Semiconductor Superlattices

Published online by Cambridge University Press:  28 February 2011

JOEL N. SCHULMAN
JOEL N. SCHULMAN*
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

A variety of theoretical models have been used to calculate the electronic properties of semiconductor superlattices. The methods vary in their ease of implementation, number of empirical parameters, and ability to incorporate physical effects. There is no “best” method; the choice of model is made on the basis of the desired property under investigation, such as subband energy levels, energy band dispersion and effective mass, strain effects, or optical spectra. The strength and limitations of the Kronig- Penney, envelope function, and tight-binding models will be reviewed, including one-, two-, and multi-band versions. The relationship of superlattice to bulk band structure, and the issue of dispersion in the growth and in-plane directions will be illustrated with the examples of the CaAs-GaAlAs and HgTe-CdTe superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 279
Copyright
Copyright © Materials Research Society 1986

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