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The Theory of Rare-Earth Impurities in Semiconductors

Published online by Cambridge University Press:  21 February 2011

Michel Lannoo  and
C. Delerue
Michel Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord (U.M.R. CNRS 9929), Département ISEN, 41, boulevard Vauban, 59046 Lille Cedex, France
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord (U.M.R. CNRS 9929), Département ISEN, 41, boulevard Vauban, 59046 Lille Cedex, France
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Abstract

The chemical trends of rare-earth impurities in semiconductors are analyzed on the basis of a selfconsistent tight-binding Green's function technique. The 4f states are treated as a frozen core and we get essentially no 5d derived states in the gap. We calculate the 4f ionization levels in the solid and conclude that the stable state is mostly 3+. We then describe the results of a LDA calculation for Er in silicon which we find to be stable in the interstitial position. Finally we consider in some detail the case of Yb in InP where we discusss the possible origin of the shallow gap levels and the mechanisms for luminescence excitation and quenching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 385
Copyright
Copyright © Materials Research Society 1993

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