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Thermal Annealing Effects in the Strained (Ga, In) as Layer

Published online by Cambridge University Press:  26 February 2011

Y-W. Choi ,
H.M. Kim ,
G. Rajeswaran  and
R. Wie
Y-W. Choi
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Bonner Hall, Amherest, NY 14260
H.M. Kim
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Bonner Hall, Amherest, NY 14260
G. Rajeswaran
Affiliation:
Eastman Kodak Company, Corporate Research Laboratories Rochester, NY 14650
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Abstract

We have studied the ternary (Ga, In)As layers in GaInAs/GaAs heterostructure systems after conventional furnace annealing or rapid thermal annealing (RTA). Measurement was done by the double crystal X-ray rocking curve technique (XRC) and the Auger Electron Spectroscopy technique (AES). X-ray rocking curves show an asymmetric shoulder in the GaInAs epilayer peak indicating a smaller lattice spacing near the surface. Epilayer peaks of encapsulated samples also show an asymmetric shoulder which is perhaps due to the tensile stress in the epilayer caused by the encapsulant film. AES depth profiles for 600°C, 15 minutes proximity annealed sample show that the concentrations of Ga, In, and As are not uniform over about 60 nm depth, showing a Garich and In, As-deficient surface. For 700°C, 20 seconds a RTA treated sample shows no such non-uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 33
Copyright
Copyright © Materials Research Society 1989

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References

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