Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-06-07T22:03:51.491Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Expansion of β-Sic, Gap and Inp

Published online by Cambridge University Press:  10 February 2011

Robert R. Reeber  and
Kai Wang
Robert R. Reeber
Affiliation:
Department of Geology, University of North Carolina-CH, Chapel Hill, NC 27599-3315
Kai Wang
Affiliation:
Department of Geology, University of North Carolina-CH, Chapel Hill, NC 27599-3315
Get access

Abstract

Thermal expansion is important for predicting residual stresses in epitaxial films, composites and electronic devices as well as for providing information relevant to an understanding of interatomic potentials and the equation of state of materials. Model calculations have many assumptions, both inherent and implicit, and have difficulty accurately representing thermal expansion at high temperatures and pressures. We utilize a semi-empirical quasi-harmonic model to evaluate available data for β-silicon carbide, gallium phosphide and indium phosphide. The model allows prediction of the thermal properties of these semiconductors from near 0 K to the vicinity of their melting points. The approach, consisting of a simplified frequency spectrum with several Einstein terms, provides a convenient mathematical method where a minimum of empirical parameters represent the thermal property.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 211
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Reeber, R. R., phys.stat. sol. (a), 32, 321 (1975).Google Scholar
2. Reeber, R.R. and Haas, J.L., Jr., Thermal Expansion 8, 31 Editor, Hahn, T.A., Plenum (1984).Google Scholar
3. Reeber, R. R. and Wang, K., Mat.Chem. and Phys. in review (1995).Google Scholar
4. Wang, K. and Reeber, R.R., phys. stat. sol. (a), 146, 621 (1994).Google Scholar
5. Reeber, R.R., Goessel, K. and Wang, K., Eur. J. Mineral. 7, 1039 (1995).Google Scholar
6. Wang, K. and Reeber, R.R., J. Appl. Cryst. 28, 306 (1995).Google Scholar
7. Wang, K. and Reeber, R.R., submitted to J. Mat. Research (1995).Google Scholar
8. Wang, K. and Reeber, R.R., High Temper. and Mat. Sci. in press (1996).Google Scholar
9. Wang, K. and Reeber, R.R., Phys Chem. Mineral in press (1996).Google Scholar
10. Wang, K. and Reeber, R.R., Geophys. Res. Lett. 22, 1297 (1995).Google Scholar
11. Hart, M., J. Cryst. Growth 55,409 (1981).Google Scholar
12. Taylor, A. and Jones, R.M., in Silicon Carbide edited by Oconnor, J.R. and Smiltens, J. Pergamon Press (1960) p. 147.Google Scholar
13. Schaake, H.S. AFCRL Report No. 69-0538,Study of Thermal and Mechanical Properties of Selected Solids from 4 Degrees to the Melting Point, NTISAD699579 (1969).Google Scholar
14. Straumanis, M.E. and Krumme, J.-P., J.Electrochem. Soc. 114, 640 (1967).Google Scholar
15. Haruna, K., Maeta, H., Ohashi, K., and Koike, T., J. Phys. C 19, 5149 (1986).Google Scholar
16. Giesecke, G. and Pfister, H., Acta Cryst. 11, 369 (1958).Google Scholar
17. Haruna, K., Maeta, H., Ohashi, K., and Koike, T., J. Phys. C 20, 5275 (1987).Google Scholar
18. Sugii, K., Koizumi, H. and Kubota, E., J. Electr. Mat. 12, 701 (1983).Google Scholar
19. Kern, E.L., Hamill, D.W., Deem, H.W. and Sheets, H.D., Mat. Res. Bull. 4, S25 (1969).Google Scholar
20. Li, Z. and Bradt, R.C., J. Mat. Sci. 21, 4366 (1986).Google Scholar
21. Reddy, S.K., Kumar, S. and Singh, R.N., J. Ceram Soc. 77, 3221(1994).Google Scholar
22. Bernstein, L. and Beals, R.J., J. Appl. Phys. 32, 122 (1961).Google Scholar
23. Deus, P., Voland, U. and Schneider, H.A., phys. stat. sol. (a) 80, K29 (1983).Google Scholar
24. Deus, P., Schneider, H.A., Voland, U. and Stiehler, K., phys. stat. sol. (a) 103, 443 (1987).Google Scholar
25. Touloukian, Y.S., Kirby, R.K., Taylor, R.E. and Lee, T.Y.R., Thermal Expansion, Nonmetallic Solids, Plenum, N.Y. 1977.Google Scholar
26. Soma, T., Satoh, J. and Matsuo, H., Solid State Commun. 42, 889 (1982).Google Scholar
27. Karch, K., Pavone, P., Windl, W., Schtitt, O., and Strauch, D., Phys. Rev. B 50, 17054 (1994).Google Scholar