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Thermal Stability of Si/Si0.85Ge0.15/Si Modulation Doped Double Heterostructures

  • P.J. Wang (a1), B.S. Meyerson (a1), P.M. Fahey (a1), F. LeGoues (a1), G.J. Scilla (a1) and J. M. Cotte (a1)...

Abstract

The thermal stability of Si/Si0.85Ge0.15/Si p-type modulation doped double heterostructures grown by the Ultra High Vacuum/ Chemical Vapor Deposition technique has been examined by Hall measurement, transmission electron microscopy, secondary ion mass spectroscopy, and Raman spectroscopy. As deposited heterostructures showed two-dimensional hole gas formation at the abrupt Si/SiGe and SiGe/Si interfaces. Annealing at 800 °C. for 1 hr. caused the diffusion of boron acceptors to the heterointerfaces, degrading the hole mobilities observed in the two dimensional hole gas. Rapid redistribution of boron, causing a loss of the 2 dimensional carrier behavior, was observed after a 900 °C, 0.5 hr. anneal. Neither Ge interdiffusion nor the generation of misfit dislocations were observed in the annealed heterostructures, evincing the defect-free crystal quality of these as-grown strained heteroepitaxial layers. The superior stability of these heterostructures have strong positive implications for Si:Ge heterojunction devices.

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  • EISSN: 1946-4274
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