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Thermal Stability of Strained Si on Relaxed Si1−xGex Buffer Layers

Published online by Cambridge University Press:  15 March 2011

P.M. Mooney ,
S.J. Koester ,
J.A. Ott ,
J.L. Jordan-Sweet ,
J.O. Chu  and
K.K. Chan
P.M. Mooney
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
S.J. Koester
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
J.A. Ott
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
J.L. Jordan-Sweet
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
J.O. Chu
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
K.K. Chan
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The thermal stability of strained Si on relaxed Si1−xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1−xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1−xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A1.2
Copyright
Copyright © Materials Research Society 2002

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