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Thermal stress as the major factor of defect generation in SiC during PVT growth

Published online by Cambridge University Press:  11 February 2011

D. I. Cherednichenko ,
R. V. Drachev ,
I. I. Khlebnikov ,
X. Deng  and
T. S. Sudarshan
D. I. Cherednichenko
Affiliation:
Electrical Engineering Department, University of South Carolina, Columbia, SC 29208, USA
R. V. Drachev
Affiliation:
Electrical Engineering Department, University of South Carolina, Columbia, SC 29208, USA
I. I. Khlebnikov
Affiliation:
Electrical Engineering Department, University of South Carolina, Columbia, SC 29208, USA
X. Deng
Affiliation:
Electrical Engineering Department, University of South Carolina, Columbia, SC 29208, USA
T. S. Sudarshan
Affiliation:
Electrical Engineering Department, University of South Carolina, Columbia, SC 29208, USA
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Abstract

Numerical simulations of the thermal stress distribution in a SiC boule 2” in diameter and 1” long grown by conventional PVT technique were performed based on the temperature field distribution in a resistively heated growth reactor that was simulated using the GAMBIT-2.0.4/FIDAP-8.6.2 software package. Analysis of the simulation results revealed the existence of a thermal stress, which was excessively nonuniform in distribution and whose magnitude exceeded the value of the critical resolved shear stress of 1.0 MPa by a factor of 2. The high stress initiated plastic deformation and the high temperature provoked the intense self-diffusion processes. The combination of these factors alters the mechanism of plastic deformation, significantly affecting the structural quality of the growing crystal. The influence of self-diffusion processes initiating the formation of interstitial atoms and vacancies; stacking fault formation as a result of the nonconservative motion of the basal plane dislocations; and micropipe formation from the dislocation groups piled up at silicon and carbon second phase inclusions are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.18
Copyright
Copyright © Materials Research Society 2003

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References

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