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Thermal xidation of silicon in dry oxygen: - the role of crystallographic orientation -

  • K. Taniguchi (a1), C. Hamaguchi (a1), K. Kobayashit (a2) and M. Hirayamat (a2)
Abstract
Abstract

Based upon the linear-parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for various crystallographic orientation wafers in the 900 −1100°C range. The parabolic rate constant is independent of substrate orientation above 1000 °C, while, at 900°C, it depends on the orientation of the underlying substrate. The behavior of the parabolic rate constant at low temperature can be explained by accounting for Si-O bond-breaking due to stress during the oxide growth. The linear rate constant is observed to depend on the crystallographic orientation of the silicon surface in all temperature range. The orientation dependence of the linear rate constant is explained by both strain relaxation of the oxide film and areal atomic density of silicon at the silicon/oxide interface.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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