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Thermodynamics, Kinetics and Interface Morphology of Reactions Between Metals and GaAs

Published online by Cambridge University Press:  25 February 2011

Jen-Chwen Lin  and
Y. Austin Chang
Jen-Chwen Lin
Affiliation:
University of Wisconsin-Madison, Department of Materials Science and Engineering, 1509 University Avenue, Madison, WI 53706, USA
Y. Austin Chang
Affiliation:
University of Wisconsin-Madison, Department of Materials Science and Engineering, 1509 University Avenue, Madison, WI 53706, USA
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Abstract

The chemical stability of interfaces between metals and GaAs was discussed in terms of reaction sequence and diffusion path concepts. The factors which determine interface morphology were also given. These general ideas can be applied to any interfacial reactions between two dissimilar materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 3
Copyright
Copyright © Materials Research Society 1989

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References

1. Lin, J.-C., Hsieh, K.-C., Schultz, K. J. and Chang, Y. A., J. Mater. Res., 3, 148 (1988).CrossRefGoogle Scholar
2. Shiau, F. Y., Chang, Y. A. and Chen, L. J., J. Electron Mats., 17, 433 (1988).CrossRefGoogle Scholar
3. Zheng, X.-Y., Schulz, K. J., Lin, J.-C. and Chang, Y. A., J. Less-Common Metals, 146, 233 (1989).CrossRefGoogle Scholar
4. Shiau, F.-Y., Zuo, Y., Lin, J.-C., Zheng, X.-X. and Chang, Y. A., Metallk, Z.., 1989, accepted for publication.Google Scholar
5. Lin, J.-C., Schulz, K. J., Hsieh, K.-C. and Chang, Y. A., in High-Temperature Materials Chemistry IV (Eds.: Munir, Z. A., Cubicciotti, D. and Tagawa, H., the Electrochem. Soc., Inc., Princeton, N.J., 477 (1988).Google Scholar
6. Shiau, F.-Y., Zuo, Y., Zheng, X.-Y., Lin, J.-C. and Chang, Y. A., in Adhesion in Solids (Eds.: Mattox, D. M., Baglin, J. E. E., Gottschall, R. J. and Batich, C. D.), MRS Symposium Proc., 119, 171 (1988).CrossRefGoogle Scholar
7. Schulz, K. J., Zheng, X.-Y. and Chang, Y. A., in Electronic Packaging Materials Science III (Eds.: Jaccodine, R., Jackson, K. A. and Sundahl, R. C.), MRS Symposium Proc., 108, 455 (1988).CrossRefGoogle Scholar
8. Lin, J.-C., Zheng, X.-Y., Hsieh, K.-C. and Chang, Y. A., in Epitaxy of Semiconductor Layered Structure (Eds.: Tung, R. T., Dawson, L. R. and Gunshor, R. L.), MRS Symposium Proc., 102, 233 (1988).CrossRefGoogle Scholar
9. Shiau, F. Y., Chang, Y. A. and Chen, L. J., in Microstructural Science for Thin Film Metallizations in Electron in ARDlications (Eds.: Sanchez, J., Smith, D. A. and Delanerolle, N.), The Minerals, Metals and Materials Soc., Warrendale, PA, 15086, 57 (1988).Google Scholar
10. Schulz, K. J., “Ternary Diffusion and Interfacial Phenomena in Metal-Gallium Arsenide Contact Systems”, PhD Thesis, University of Wisconsin-Madison, Madison, WI, USA (1988).Google Scholar
11. Schulz, K. J., Zheng, X.-Y., Lin, J.-C. and Chang, Y. A., Acta Met., 1989, under review.Google Scholar
12. Zheng, X.-Y., Schulz, K. J. and Chang, Y. A., Bull. Alloy Phase Diagram, 1989, under review.Google Scholar
13. Schulz, K. J., Zheng, X.-Y. and Chang, Y. A., Mats. Sci. and Engin, 1989, under review.Google Scholar
14. Zheng, X.-Y., Lin, J.-C., Swenson, D. J., Hsieh, K.-C. and Chang, Y. A., Maters. Sci. and Engin., B, 1989, under review.Google Scholar
15. Schulz, K. J. and Chang, Y. A., in Advances in Materials, Processing and Devices in III-V Compound Semiconductors (Eds.: Sadana, D. K., Dupois, R. and Eastman, L.) MRS Symposium Proc., 1989, 144, (in press).Google Scholar
16. Tsai, C. T. and Williams, R. S., J. Mater. Res., 1, 820 (1986).Google Scholar
17. Tsai, C. T. and Williams, R. S., J. Mater. Res., 1, 352 (1986).Google Scholar
18. Lince, J. R., Tsai, C. T. and Williams, R. S., J. Mater. Res. 1, 537 (1986).CrossRefGoogle Scholar
19. Pugh, J. H. and Williams, R. S., J. Mater. Res. 1, 343 (1986).CrossRefGoogle Scholar
20. Lince, J. R. and Williams, R. S., J. Vac. Sci. Technol. B3, 1217 (1985).CrossRefGoogle Scholar
21. Beyers, R., Kim, K. B. and Sinclair, R., J. Appl. Phys. 61, 2195 (1987).CrossRefGoogle Scholar
22. Sands, T., Mats. Sci. Engin. B: Solid-State Materials for Advanced Technology, 1988, in print.Google Scholar
23. Sands, T., J. Metals, 38, 31 (1986).Google Scholar
24. Schmid-Fetzer, R., J. Electron. Mater. 17 193 (1988).CrossRefGoogle Scholar
25. Tu, K. N., Ottaviani, G., Goselle, U. and Foll, H., J. Appl. Phys. 54, 756 (1983).CrossRefGoogle Scholar
26. Ottaviani, G., in Thin Films and Interfaces II (Edited by E, J.. Baglin, E., Campbell, D. and Cho, W. K.), North-Holland, NY, 21 (1984); also J. Vac. Sci. Techn. 16, 1112 (1979).Google Scholar
27. Gosele, U. and Tu, K. N., J. Appl. Phys. 53, 3252 (1982).CrossRefGoogle Scholar
28. Tu, K. N., Research Report, “Interdiffusion in Thin Films”, IBM T. J. Watson Res. Center, Yorktown Hts., NY, 1984.Google Scholar
29. Colgan, E. G. and Mayer, J. W., “Sequence of Phase Fromation in Ni/Al Contrast with Ni/Si”, Poster Epl. 21, presented at the 1985 MRS Meeting in Boston, Mass, Dec. 2-7, 1985.Google Scholar
30. Majni, G., Costato, M. and Panini, F., Thin Solid Films, 125, 71 (1985).CrossRefGoogle Scholar
31. Wagner, C., Anorg, Z.. Allgem. Chem. 236, 320 (1938).CrossRefGoogle Scholar
32. Wagner, C., J. Electrochem. Soc. 103, 571 (1956).CrossRefGoogle Scholar
33. Rapp, R. A., Ezis, A. and Yurek, G. J., Metall. Trans. 4, 1283 (1973).CrossRefGoogle Scholar
34. Yurek, G. J., Rapp, R. A. and Hirth, J. P., Metall. Trans. 4, 1293 (1973).CrossRefGoogle Scholar
35. Shatynski, S. R., Hirth, J. P. and Rapp, R. A., Metall. Trans. 10A, 591 (1979).CrossRefGoogle Scholar
36. Kirkaldy, J. S. and Young, D. J., Diffusion in the Condensed State, Institute of Metals, London, (1985).Google Scholar
37. Kirkaldy, J. S. and Brown, L. C., Can. Met. Quart. 2, 89 (1963).CrossRefGoogle Scholar
38. Kirkaldy, J. S., Can. J. Phys. 36, 899 (1958).CrossRefGoogle Scholar
39. Kirkaldy, J. S., Can. J. Phys. 36, 907 (1958).CrossRefGoogle Scholar
40. Kirkaldy, J. S., Can. J. Phys. 36, 917 (1958).CrossRefGoogle Scholar
41. Kirkaldy, J. S. and Fedak, D. G., Trans. TMS-AIME 224, 490 (1962).Google Scholar
42. Jan, C. H., a graduate student working under the direction of Y. A. Chang, unpublished research, University of Wisconsin-Madison, 1988.Google Scholar
43. Loo, F. J. J. van, Beck, J. A. van and Bastin, G. F., Solid State lonics 16, 131 (1985).Google Scholar
44. Beck, J. A. van, Kok, Pimit and Loo, F. J. J. van, Oxid Met. 22, 147 (1984).Google Scholar
45. Vosters, P., Laheij, M., Loo, F. J. J. van and Metselaar, R., Oxid. Met. 20, 147 (1983).CrossRefGoogle Scholar
46. Laheij, M., Loo, F. J. J. van and Metselaar, R., Oxidation Met. 14, 207 (1980).CrossRefGoogle Scholar
47. Leute, V., Solid State lonics 17, 185 (1985).CrossRefGoogle Scholar
48. Onsager, L., Phys. Rev. 38, 2265 (1931).CrossRefGoogle Scholar
49. Onsager, L., Phys. Rev. 37, 4305 (1937).Google Scholar
50. Onsager, L., Ann. N.Y. Acad. Sci. 46, 241 (1941).CrossRefGoogle Scholar