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Thermoelectric properties of Ni-based oxides

Published online by Cambridge University Press:  01 February 2011

R. Funahashi ,
M. Mikami ,
S. Urata ,
T. Kouuchi ,
K. Mizuno  and
K. Chong
R. Funahashi
Affiliation:
National Institute of Advanced Industrial Science and Technology Ikeda, Osaka 563–8577, Japan CREST, Japan Science and Technology Corporation Ikeda, Osaka 563–8577, Japan
M. Mikami
Affiliation:
CREST, Japan Science and Technology Corporation Ikeda, Osaka 563–8577, Japan
S. Urata
Affiliation:
National Institute of Advanced Industrial Science and Technology Ikeda, Osaka 563–8577, Japan
T. Kouuchi
Affiliation:
Osaka Electro-Communication University Neyagawa, Osaka 572–0833, Japan e-mail: funahashi-r@aist.go.jp
K. Mizuno
Affiliation:
Osaka Electro-Communication University Neyagawa, Osaka 572–0833, Japan e-mail: funahashi-r@aist.go.jp
K. Chong
Affiliation:
Osaka Electro-Communication University Neyagawa, Osaka 572–0833, Japan e-mail: funahashi-r@aist.go.jp
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Extract

A high-throughput screening technique has been developed and was utilized in the discovery of a new n-type oxide possessing good thermoelectric properties. Screening of metal binary systems consisting of 3d transition metals using this technique showed LaNiO3 to possess the desired n-type properties. Electrical resistivity (ρ) of this oxide is favorably quite low, however, the Seebeck coefficient (S) is as small as –25 μV/K. To enhance the thermoelectric properties of LaNiO3, high-throughput screening was employed to examine candidates from the metal ternary La1–xMxNiO3 and LaNi1–xNxO3 systems. Bi substitution in the La1–xMxNiO3 systems and Cu substitution in the LaNi1–xNxO3 systems were found to be effective for improvement of S and ρ respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S3.3
Copyright
Copyright © Materials Research Society 2004

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References

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