Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T09:29:33.463Z Has data issue: false hasContentIssue false
  • English
  • Français

The Thickness Effect on the Microstructure of Sputtered Films Studied by a New X-Ray Diffraction Method

Published online by Cambridge University Press:  22 February 2011

M. Hecq
M. Hecq*
Affiliation:
Laboratoire de Chimie Inorganique, Université de l'Etat à Mons, Avenue Maistriau, 23 B -7000 MONS, Belgíum
Get access

Abstract

The microstructure of sputtered platinum thin films has been investigated by X-ray diffraction analysis. The (111) reflection was analysed by the variance and the Fourier methods. The effective particle size was calculated from the variance slope coefficient and the microstrain from the Fourier cosine coefficients assuming that the effective sizes calculated from both methods are identical. Various thickness thin films have been studied. The effective particle size (Dev) increases with ev increasing film thickness until a thickness of ≈ 1500 Å, then Dev becomes constant and independent on the thickness. The microstrain varies in an inverse way to Dev ; it decreases with increasing thickness. Above a thickness of 1500 Å, the microstrain is constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 55
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Warren, B.E., X-Ray Diffraction (Addision-Wesley, Reading, Massachussetts, 1969).Google Scholar
2 Wilson, A.J.C., Mathematical Theory of X-Ray Powder Diffractometry (Centrex, Eidhoven, 1).Google Scholar
3 Smith, W.L., J. Appl. Cryst. 5 (1972) 127.Google Scholar
4 Hecq, M., Hecq, A. and Langford, J.I., J. Appl. Phys. 53 (1982) 421.Google Scholar
5 Delhez, R., Keijser, T.H. de and Mittemeijer, E.J., Proceedings of Symposium on Accuracy in Powder Diffraction, N.B.S. Special Publication 567 (1980) 213.Google Scholar
6 Mignot, J. and Rondot, D., Acta Met. 23 (1975) 1321.CrossRefGoogle Scholar
7 Adler, T. and Houska, C.R., J. Appl. Phys. 50 (1979) 3288.Google Scholar
8 Keijser, Th. h. de, Langford, J.I., Mittemiejer, E.J. and Vogels, A.B.P., J. Appl. Cryst. 15 (1982) 308.Google Scholar
9 Langford, J.I., J. Appl. Cryst. 15 (1982) 315.Google Scholar
10 Wilson, A.J.C., Proc. Phys. Soc. London 82 (1963) 986.Google Scholar
11 Halder, S.K., Sen, Suchitra and Gupta, S.P. Sen, J. Phys. D. Appl. Phys. 9 (1976) 1867.Google Scholar
12 Kidron, A. and Angelis, R.J. De, Acta Cryst. A27 (1971) 596.Google Scholar
13 Edwards, H.J. and Toman, K., J. Appl. Cryst. 4 (1971) 323.Google Scholar
14 Cuomo, J.J. and Gambino, R.J., J. Vac. Sci. Technol. 14 (1977) 152.CrossRefGoogle Scholar
15 Gangulee, A., J. Appl. Phys. 43 (1972) 867.Google Scholar
16 Vook, R.W. in “Epitaxial Growth” ed. Mattews, J.W. (Ac. Press. New-York 1975).Google Scholar
17 Neugebauer, C.A. in “Handbook of Thin Film Technology” ed. Maissel, L.I. and Glang, R. (Mac Graw-Hill, New-York 1970).Google Scholar
18 Lewis, B. and ANDERSON, J.C. in “Nucleation and Growth of Thin Films” (Ac. Press., New-York 1978) 442.Google Scholar
19 Halder, N.C. and WAGNER, C.N.J. in “Advances in X-Ray Analysis” volume 9 ed. Mallett, G.R., Fay, M. and Mueller, W.M. (Plenum Press, New-York, 1966) 91.Google Scholar
20 Gangulee, A., J. Appl. Cryst. 7 (1974) 434.Google Scholar