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Thin Film Properties of LPCVD TiN Barrier for Silicon Device Technology

Published online by Cambridge University Press:  15 February 2011

Rama I. Hegde ,
Robert W. Fiordalice ,
Edward O. Travis  and
Philip J. Tobin
Rama I. Hegde
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Robert W. Fiordalice
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Edward O. Travis
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Philip J. Tobin
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, Texas 78721
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Abstract

Thin film properties of LPCVD TiN barriers deposited on Si(100), using TiCl4 and NH3 as reactants, were investigated as a function of deposition temperature between 400 °C and 700 °C. The TiN film chemistry and film composition were studied by AES and RBS techniques, while the microstructural properties (grain size, lattice parameter and texture) were evaluated by XRD. The TiN deposition rates and film resistivities were also determined. Finally the film properties of the TiN barriers as determined by surface analysis were related to the process parameters.

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