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Thin Multi-Layered Photoreceptor Deposited From Disilane

Published online by Cambridge University Press:  28 February 2011

S. Araki ,
H. Nou ,
H. Kamaji  and
K. Kiyota
S. Araki
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
H. Nou
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
H. Kamaji
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
K. Kiyota
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
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Abstract

A thin multi-layered photoreceptor drum has been fabricated, using glow-discharge decomposition of disilane. The photoreceptor is thin(10 μm), but it is charged up sufficiently. The photoreceptor has three layers; the p-type a-Si:H (blocking layer), the intrinsic B-doped a-Si:H (photoconductive layer) and a-SiC:H (passivation layer). Disilane is highly reactive. The intrinsic B-doped a-Si:H was prepared from a slightly gaseous mixture of B2H6 (3 ppm). The amorphous-SiC:H passivation layer deposited from Si2H6 and C3H8 was developed to achieve sufficient surface potential and to improve the environmental characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 677
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Shimizu, I., J. Non-Cryst. Solids 77&78, 1363 (1985)Google Scholar
2. Shimizu, I., Komatsu, T., Saito, K. and Inoue, E., J. Non-Cryst. Solids 35&36, 773(1980)Google Scholar
3. Ogawa, K., Isamu, I. and Inoue, E., Jpn. J. Appl. Phys., 20, L639(1981)CrossRefGoogle Scholar
4. Nitta, S., Hatano, A., Yamada, M., Watanabe, M. and Kawai, M., J. Non-Cryst. Solids 59&60, 553(1983)Google Scholar
5. Tawada, Y., in Amorphous Semiconductor Technologies & Devices (1983) edited by Hamakawa, Y. (OHM*North-Holland, Tokyo, Amsterdam, 1983), Pp. 148–160.Google Scholar
6. Hirose, M., in Amorphous Semiconductor Technologies & Devices (1984) edited by Hamakawa, Y. (OHM&North-Holland, Tokyo, Amsterdam, 1984), pp. 67–79.Google Scholar