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A Tight-Binding Theory of the Electronic Structures for Rhombohedral Semimetals and Sb/GaSb, Sb/AlSb Superlattices

Published online by Cambridge University Press:  21 February 2011

J.H. Xu ,
E.G. Wang ,
C.S. Ting  and
W.P. Su
J.H. Xu
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
E.G. Wang
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
C.S. Ting
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
W.P. Su
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204 Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
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Abstract

The band structures of three group-V semimetals As, Sb, and Bi with rhombohedral A7 symmetry are studied using a second-neighbor tight-binding model including spin-orbit interaction with an sp3s* basis. Then the bulk tight-binding parameters are used to investigate the electronic properties of semimetal-semiconductor superlattices made of alternating (111) layers of Sb and GaSb or AlSb. It is found that the band gap can be adjustable depending primarily on the thickness of the Sb layers. An interface state is observed in the region of the gap.

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