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Time-Dependent Capture Numbers with Repulsive Pair Interactions: Cu/Cu(111) and Ge/Si(001)

Published online by Cambridge University Press:  11 February 2011

J. A. Venables ,
H. Brune  and
J. Drucker
J. A. Venables
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe AZ 85287–1504, U.S.A. School of Chemistry, Physics & Environmental Science, University of Sussex, Brighton, U.K.
H. Brune
Affiliation:
Institut de Physique des Nanostructures, EPFL, CH 1015 Lausanne, Switzerland.
J. Drucker
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe AZ 85287–1504, U.S.A.
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Abstract

Recent experiments and calculations have shown that weak repulsive interactions between adsorbate atoms may shift nucleation kinetics from the well-known diffusion limit towards the attachment-limited case. The distinctions between diffusion- and attachment-limited kinetics are clarified, and the increased importance of the transient nucleation regime in the latter case is shown to be due to a combination of delayed nucleation and reduced capture. A time-dependent interpolation scheme between attachment- and diffusion-limited capture numbers is proposed, and tested against KMC simulations. Using this scheme to interpret recent STM results on Cu/Cu(111), bounds on the maximum adatom-adatom potential repulsive energy of 12±2 meV are deduced. Time-dependent effects also occur in the growth and ripening of strained Ge islands on Si(001), and the similarities and differences between these two systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W2.1
Copyright
Copyright © Materials Research Society 2003

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References

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