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Time-Resolved Studies of Rapid Solidification in HighlyUndercooled Molten Silicon*

Published online by Cambridge University Press:  25 February 2011

D.H. Lowndes ,
G.E. Jellison Jr. ,
R.F. Wood ,
S.J. Pennycook  and
R.W. Carpenter
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
G.E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
R.F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
R.W. Carpenter
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 85287
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Abstract

A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thickamorphous silicon layers produced by Si ion implantation into (100)crystalline Si substrates. Time-resolved reflectivity measurements at twodifferent probe wavelengths (633 nm and 1.15 μm) and post-irradiation TEMmeasurements were used to study the formation of an undercooled liquid Siphase and the subsequent solidification processes. The time-resolvedmeasurements provide new experimental information about the nucleation offine-grained Si crystallites in undercooled liquid Si, at low laser energydensities (Eℓ), and about the growth of large-grained Si in thenear-surface region at higher Eℓ. Measurements with the infraredprobe beam reveal the presence of a buried, propagating liquid layer at low??. Model calculations indicate that this liquid layer is generated in partby the release of latent heat associated with the nucleation and growthprocess.

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Footnotes

*

Research sponsored by the Division of Materials Sciences, . S.Department of Energy under contract DE-ACO5-840R21400 with MartinMarietta Energy Systems,Inc.

References

REFERENCES

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