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Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge †

Published online by Cambridge University Press:  25 February 2011

J.Z. Tischler ,
B.C. Larson  and
D.M. Mills
J.Z. Tischler
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B.C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D.M. Mills
Affiliation:
CHESS and Applied and Engineering Physics, Cornell University, Wilson Laboratory, Ithaca, NY 14853
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Abstract

Synchrotron x-ray pulses from the Cornell High Energy Synchrotron Source(CHESS) have been used to carry out nanosecond resolution measurements ofthe temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF(249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 wereused. The temperatures were determined from x-ray Bragg profile measurementsof thermal expansion induced strain on <111> oriented Ge. The dataindicate the presence of a liquid-solid interface near the melting point,and large (1500-4500°C/pm) temperature gradients in the solid; these Geresults are analagous to previous ones for Si. The measured temperaturedistributions are compared with those obtained from heat flow calculations,and the overheating and undercooling of the interface relative to theequilibrium melting point are discussed.

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Footnotes

†

Research sponsored by the Division of Materials Sciences, U.S.Department of Energy under contract DE-ACO5-840R21400 with MartinMarietta Energy Systems, Inc.

References

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