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Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

Published online by Cambridge University Press:  25 February 2011

J.Z. Tischler
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B.C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D.M. Mills
Affiliation:
CHESS and Applied and Engineering Physics, Cornell University, Wilson Laboratory, Ithaca, NY14853
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Abstract

Synchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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Footnotes

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

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