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Transient Decay Analysis in a-Si by Monte Carlo Method

Published online by Cambridge University Press:  26 February 2011

C. Manfredotti ,
A. Pavese ,
F. Fizzotti ,
U. Nastasi  and
G. Amato
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
A. Pavese
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
F. Fizzotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
U. Nastasi
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce, 10100 Torino (Italy)
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Abstract

Both the optical and transport properties of a-Si: H have been suitably parametrized as a function of Urbach's tail logarithmic slope Eo, surface density of states Ns and optical absorption normalization parameter αo, in order to reduce the number of parameters used for p-i-n solar cell S, simulation.

The transient photovoltaic effect has been simulated by a Monte Carlo multitrapping computer model in order to investigate the possibility of its use for p-i-n solar cell diagnostics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 611
Copyright
Copyright © Materials Research Society 1988

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References

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