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Transient Structural Relaxation and Melting Temperature of Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

W. C. Sinke ,
T. Warabisako ,
M. Miyao ,
T. Tokuyama ,
S. Roorda  and
F. W. Saris
W. C. Sinke
Affiliation:
Central Research Laboratory, Hitachi Ltd., P.O. Box 2, Kokubunji, Tokyo 185, Japan.
T. Warabisako
Affiliation:
Central Research Laboratory, Hitachi Ltd., P.O. Box 2, Kokubunji, Tokyo 185, Japan.
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., P.O. Box 2, Kokubunji, Tokyo 185, Japan.
T. Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., P.O. Box 2, Kokubunji, Tokyo 185, Japan.
S. Roorda
Affiliation:
FOM-Institute for Atomic- and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
F. W. Saris
Affiliation:
FOM-Institute for Atomic- and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
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Abstract

The structure of ion-implanted a-Si has been studied using Raman spectroscopy. It is shown that the average bond-angle distortion and the strain energy stored in the random network vary drastically upon annealing. Relaxation is enhanced in the case of heating by laser irradiation. The results imply that the apparent melting temperature of a-Si may vary from one experiment to another, depending on the heating rate and -method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 549
Copyright
Copyright © Materials Research Society 1988

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References

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