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Transient Thermal Imaging of Si/SiGe superlattice and bulk Si microrefrigerators

Published online by Cambridge University Press:  31 January 2011

Hélène Michel ,
Rémi Coppard ,
Dustin Kendig ,
James Christofferson ,
Kerry Maize  and
Ali Shakouri
Hélène Michel
Affiliation:
lnmichel@soe.ucsc.edu, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
Rémi Coppard
Affiliation:
remi.coppard@gmail.com, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
Dustin Kendig
Affiliation:
dkendig@soe.ucsc.ed, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
James Christofferson
Affiliation:
jchrist@soe.ucsc.edu, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
Kerry Maize
Affiliation:
kerry@soe.ucsc.edu, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
Ali Shakouri
Affiliation:
ali@soe.ucsc.edu, University of California Santa cruz, Baskin school of Engineering, Santa cruz, California, United States
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Abstract

In this paper, we present a systematic study of the transient cooling in different Si/SiGe superlattices as well as bulk silicon microrefrigerators. Transient thermoreflectance imaging is used to obtain the temperature map of the device with sub micrometer spatial, 100ns temporal and 0.1C temperature resolution. It is shown that Peltier cooling dominates in the first 10-30 microseconds before Joule heating in the active and buffer layers reach the top surface. The transient characterization shows that at the optimum current for maximum steady-state cooling, the response of bulk silicon cooler is 25% faster than the 3 microns thick superlattice device and that of the 6 microns thick superlattice is 25% slower. However, it is possible to increase the cooling speed by a factor of two or three, down to 3.6 microseconds, by overdriving the current at the expense of the reduced steady-state cooling.

Keywords

thermoelectricmicroelectronicsthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1218: Symposium Z – Energy Harvesting–From Fundamentals to Devices , 2009 , 1218-Z02-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Wijngaards, D.D.L.), Kong, S.H. Bartek, M., Wolffenbuttel, R.F. Sensors and Actuators 85, 316 (2000)Google Scholar
2 Zhang, Yan, Christofferson, James, Shakouri, Ali, Zeng, Gehong, Bowers, John E. Fellow, IEEE, and Croke, Edward T. Transactions on components and packaging technologies, 29, 395 (2006)Google Scholar
3 Chowdhury, Ihtesham, Prasher, Ravi, Lofgreen, Kelly, Chrysler, Gregory, Narasimhan, Sridhar, Mahajan, Ravi, Koester, David, Alley, Randall and Venkatasubramanian, Rama, Nature nanotechnology, 4, 235 (2009)Google Scholar
4 Shakouri, Ali and Zhang, Yan IEEE Transactions on components and packaging technologies, 29, 65 (2005)Google Scholar
5 Meddins, H R and Parrott, J E, J. Phys.C, 9, 1263, (1976)Google Scholar
6 Vining, C.B., Laskow, W. Hanson, J. O., Beck, R. R. Van der, and Gorsuch, P. D. J.Appl.Phys, 69, 4333 (1991)Google Scholar
7 Zeng, X. Fan G. Croke, E. LaBounty, C. Ahn, C.C. Vashaee, D. Shakouri, A. and Bowers, J.E., Electronics Lett. 37, 126 (2001)Google Scholar
8 Zeng, Y. Ezzahri G., Fukutani, K. Bian, Z. Shakouri, A. Microelectronics Journal 39, 981 (2008)Google Scholar
9 Christofferson, James and Shakouri, Ali, Rev. Sci. Instrum 76, 024903 (2005)Google Scholar
10 , Grauby, Salhi, Amine, Lopez, Luis-David Patino, Claeys, Wilfrid, Charlot, Benoît, Dilhaire, Stefan, Microelectronics Reliability 48, 204–211 (2008)Google Scholar
11 Maize, K. J, Christofferson, Shakouri, A. 24th IEEE SEMI-THERM Symp. Proc 55 (2008)Google Scholar
12SGrauby, ., Forget, B. C. Holé, S., Fournier, D. Rev. Sci. Instrum 70, 3603 (1999)Google Scholar
13 Christofferson, J. Ezzahri, Y. Maize, K. and Shakouri, Ali 25th IEEE SEMI-THERM Symp. Proc, 45 (2009)Google Scholar
14 Shakouri, Ali, Proceedings of the IEEE, 94, 1613 (2006)Google Scholar
15 Fan, Xiaofeng, PhD. Thesis University of California Santa Barbara, 2001 Google Scholar