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Transient Thermal Processing of GaAs

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton ,
J. M. Gibson ,
D. C. Jacobson ,
J. M. Poate ,
J. S. Williams  and
D. O. Boerma
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, U.S.A.
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, U.S.A.
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, U.S.A.
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, U.S.A.
J. S. Williams
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Victoria, 3000, Australia.
D. O. Boerma
Affiliation:
University of Groningen, 9718 CM Groningen, The Netherlands.
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Abstract

A comprehensive review is presented of the use of transient thermal processing for the activation of implanted dopants, the alloying of ohmic contacts, the pulse diffusion of Zn for p+ contacts, and other heat treatments of GaAs. In all cases, transient processing produces results at least as good as furnace heating, and in some instances, markedly better. The special needs of GaAs, such as encapsulation of the wafer surface, and prevention of slip and warpage are discussed, as well as recent results detailing implant damage removal processes during transient annealing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 351
Copyright
Copyright © Materials Research Society 1986

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