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Transition Metal Doped ZnO for Spintronics

  • Stephen J. Pearton (a1), D. P. Norton (a2), M. P. Ivill (a3), A. F. Hebard (a4), W. M. Chen (a5), I. A. Buyanova (a6) and J. M. Zavada (a7)...
Abstract
Abstract

ZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping. The saturation magnetization and coercivity of the implanted single-phase films were both strong functions of the initial anneal temperature, suggesting that carrier concentration alone cannot account for the magnetic properties of ZnO:Mn and factors such as crystalline quality and residual defects play a role. Plausible mechanisms for the ferromagnetism include the bound magnetic polaron model or exchange is mediated by carriers in a spin-spilt impurity band derived from extended donor orbitals. Spin-dependent phenomena in ZnO may lead to devices with new or enhanced functionality, such as polarized solid-state light sources and sensitive biological and chemical sensors.

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