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Transparent Oxide Semiconductors Obtained by PLD

Published online by Cambridge University Press:  01 February 2011

Anna Vila ,
Antonis Olziersky ,
Joaquim Font ,
Teresa Andreu ,
Erik Koep  and
Juan Ramon Morante
Anna Vila
Affiliation:
annavila92@gmail.com, University of Barcelona, Electronics Department, Martí i Franqués 1, Barcelona, 08028, Spain
Antonis Olziersky
Affiliation:
aolziersky@el.ub.es, University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Joaquim Font
Affiliation:
jfontb@el.ub.es, University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Teresa Andreu
Affiliation:
tandreu@el.ub.es, University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Erik Koep
Affiliation:
ekoep@el.ub.es, University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Juan Ramon Morante
Affiliation:
morante19@yahoo.es, University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
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Abstract

In this work we studied metaloxide films such as ZnO, In2O3-ZnO, In2O3-ZnO-ZrO2 and Ga2O3-In2O3-ZnO deposited by pulsed laser deposition on fused silica substrates at room temperature. Optical transmission measurements in the ultra violet – visible region showed that oxygen-rich atmospheres during deposition help to obtain more transparent films in the optical region while improving overall UV absorption transition related to the band gap. Less resistive films are produced in oxygen-rich atmospheres but an increase of oxygen pressure leads to higher resistivity films.

Keywords

optical propertiesoxidethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I07-12
Copyright
Copyright © Materials Research Society 2008

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References

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