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Tuneable CMOS and Current Mirror Circuit with Double-gate Screen Grid Field Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Yasaman Shadrokh ,
Kristel Fobelets  and
Enrique Velazquez-Perez
Yasaman Shadrokh
Affiliation:
y.shadrokh@imperial.ac.uk, Imperial College, Electronic and Electrical Engineering, Level 1, Electronic and Electrical Engineering Building, South Kensington Campus, Imperial Colleeg, London, SW7 2AZ, United Kingdom
Kristel Fobelets
Affiliation:
k.fobelets@imperial.ac.uk, Imperial College London, Elec. Eng., Exhibition Road, London, SW7 2AZ, United Kingdom
Enrique Velazquez-Perez
Affiliation:
js@usal.es, Universidad de Salamanca, Departmento de Física Aplicada, Salamanca, Spain
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Abstract

The multiple-gate aspect of the Screen Grid Field Effect Transistor (SGrFET) increases functionality and reduces component count of circuits. An independently-driven gate SGrFET is used to control the switching voltage as well as the gain factor of an inverter. The multi-gate configuration of the SGrFET allows a decrease in output conductance without an increase of transistors count. This leads to a reduction in fabrication complexity, chip area and parasitics. In addition, a simple SGrFETs-based current mirror circuit is proposed with gain factor control.

Keywords

simulationdeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I02-09
Copyright
Copyright © Materials Research Society 2010

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References

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