Hostname: page-component-54dcc4c588-2ptsp Total loading time: 0 Render date: 2025-09-12T13:29:04.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Yohai Roichman  and
Nir Tessler
Yohai Roichman
Affiliation:
Electrical Engineering, Technion, Haifa, Israel
Nir Tessler
Affiliation:
Electrical Engineering, Technion, Haifa, Israel
Get access

Abstract

Turn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I4.7
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Sze, S.M., Physics of Semiconductor Devices. 1981, New York: Wiley.Google Scholar
2 Burgi, L., Friend, R.H., and Sirringhaus, H., Applied Physics Letters, 2003. 82(9): p. 1482–1484.Google Scholar
3 Shaked, S., et al., Advanced Materials, 2003. 15(11): p. 913–+.Google Scholar
4 Tessler, N. and Roichman, Y., Applied Physics Letters, 2001. 79(18): p. 2987–2989.Google Scholar
5 Roichman, Y. and Tessler, N., Applied Physics Letters, 2002. 80(1): p. 151–153.Google Scholar
6 Meijer, E.J., et al., Applied Physics Letters, 2002. 80(20): p. 3838–3840.Google Scholar
7 Roichman, Y., Preezant, Y., and Tessler, N., Physica Status Solidi A-Applied Research, 2004. 201(6): p. 1246–1262.Google Scholar
8 Vissenberg, M. and Matters, M., Physical Review B, 1998. 57(20): p. 12964–12967.Google Scholar
9 Horowitz, G. and Delannoy, P., Journal of Applied Physics, 1991. 70(1): p. 469–475.Google Scholar
10 Roichman, Y. and Tessler, N., Synthetic Metals, 2003. 135(1-3): p. 443–444.Google Scholar