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Twinning Effects in Hg1−xCdxTe(x˜0.2) Grown by THM in the 〈111〉 Direction

Published online by Cambridge University Press:  15 February 2011

Efiezer Weiss ,
Ehud Kedar  and
Nili Mainzer
Efiezer Weiss
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. O. Box 2250, Haifa 31021, Israel.
Ehud Kedar
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. O. Box 2250, Haifa 31021, Israel.
Nili Mainzer
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. O. Box 2250, Haifa 31021, Israel.
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Abstract

Hg1−xCdxTe crystals with x˜0.2 were grown by the traveling heater method (THM), in either the [111]A or [111]B directions, using oriented CdTe seeds. Twins are sometimes formed during the growth of these crystals. In crystals grown in the [111]A direction the twins, of orientation [511]B, are constantly growing at the expense of the original [111]A oriented grain. Growth in the [111]B direction, on the other hand, suppresses the growth of the twin domain. Photodiodes and capacitors realized on the (111)A plane are markedly superior to those on the twin plane, [511]B. The difference is due to higher fixed charge and larger fast surface state densities in the case of the [511]B plane. These effects are explained by the lattice structures in the {111} and {511} planes and their possible influence on surface reactivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 169
Copyright
Copyright © Materials Research Society 1994

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