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Two Dimensional Numerical Thermal Analysis of Silicon on Insulator Recrystallization Processes by a Moving Heat Source

Published online by Cambridge University Press:  22 February 2011

C.Y. Chang ,
Y.K. Fang ,
B.S. Wu  and
R.M. Chen
C.Y. Chang
Affiliation:
Institute of Electrical & Computer Engineering, National Cheng Kung University, Tainan, Taiwan, Rep. of China
Y.K. Fang
Affiliation:
Institute of Electrical & Computer Engineering, National Cheng Kung University, Tainan, Taiwan, Rep. of China
B.S. Wu
Affiliation:
Institute of Electrical & Computer Engineering, National Cheng Kung University, Tainan, Taiwan, Rep. of China
R.M. Chen
Affiliation:
Institute of Electrical & Computer Engineering, National Cheng Kung University, Tainan, Taiwan, Rep. of China
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Abstract

The moving-zone melt recrystallization of polysilicon on insulator substrate has been studied with computer simulation methods. The most important parameters such as upper strip heater moving velocity, the power of upper strip heater, substrate temperature were investigated. Generally speaking, temperature profile in multilayer and melt depth of poly-Si are difficult to be visualized, but are still important for recrystallization process. Therefore by using two dimensional finite difference method, a numerical analysis of moving melt zone recrystallization processes has been developed. Through this analysis, the temperature profile in multilayer and melt depth of poly-Si are depicted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 497
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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