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Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic OrientationControl

Published online by Cambridge University Press:  25 February 2011

K. Egami ,
M. Kimura ,
T. Hamaguchi  and
N. Endo
K. Egami
Affiliation:
Fundamental Research Laboratories
M. Kimura
Affiliation:
Fundamental Research Laboratories
T. Hamaguchi
Affiliation:
R&D Planning and Technical Service Division
N. Endo
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, Miyazaki, Miyamae-ku, Kawasaki 213, JAPAN
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Abstract

We demonstrate a new two step laser recrystallization for crystallographicorientation control. In the cw Ar ion laser recrystallization of siliconstripes in the structure consisting of SiO2grooves/polycrystalline Si sublayer/backing substrates, first, one edge ofpoly-Si stripes is intentionally recrystallized under relatively low laserpower and a long dwell time in order to form a strong <100> texturewith lamellar grains, second, poly-Si stripes are fully recrystallized usingthe above <100> texture as seed crystals by scanning a laser beamalong the stripes. We discuss a strong <100> texture formation relatedto partially molten state in the first process of secondary seed formation,and use of a grooved structure with poly-Si sublayer suppressing edgenucleation during lateral epitaxy.

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References

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