Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T07:58:34.378Z Has data issue: false hasContentIssue false
  • English
  • Français

UHV-Investigation on MOCVD-grown InP(100) Surfaces

Published online by Cambridge University Press:  10 February 2011

S. Visbeck ,
T. Hannappel ,
P. Vogt ,
J. Mahrt ,
M. Zorn ,
K. Knorr ,
M. Neges ,
N. Esser ,
W. Richter  and
F. Willig
S. Visbeck
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany, visbeck@hmi.de
T. Hannappel
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany
P. Vogt
Affiliation:
Technische Universität Berlin, PN 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
J. Mahrt
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany
M. Zorn
Affiliation:
Technische Universität Berlin, PN 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
K. Knorr
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany Technische Universität Berlin, PN 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
M. Neges
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany
N. Esser
Affiliation:
Technische Universität Berlin, PN 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
W. Richter
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany
F. Willig
Affiliation:
Hahn-Meitner-Institut, Dept. CD, Glienickerstrasse 100, 14109 Berlin, Germany
Get access

Abstract

Epitaxial InP(100)-films were prepared with TBP (tertiarybutylphosphine) and TMIn (trimethylindium) as precursors in a commercial MOCVD reactor. During growth, the V-III-ratio and TBP partial pressure were varied between 50 and 1 and possible changes of the surface structure monitored with the corresponding RAS (reflectance anisotropy spectroscopy) signal based on a correlation established with corresponding LEED measurements. Bulk properties of these films were investigated ex-situ with photoluminescence at 2 K, showing no noticeable difference between the samples. The MOCVD apparatus was modified to facilitate transfer of the sample from the MOCVD environment to UIHV in less than 20 seconds (to the 10−9 mbar range). After transfer, the same RA spectrum was recovered also in the critical case of the P-rich, as-grown surface. A corresponding Auger electron spectrum (AES) did not show any trace of contamination. Furthermore, the surface structure was investigated with LEED and STM. The LEED picture shows a clear (2×l)-pattern with a weak twofold symmetry along the [011] direction, STM pictures revealed a disordered surface terminated by P-dimers

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 67
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yang, X., Ishikawa, Y., Ozeki, T., and Hasegawa, H., Jap. J. Appl. Phys 35, 1267 (1996)Google Scholar
2. Esser, N., Resch-Esser, U., Pristovsek, M., and Richter, W., Phys. Rev. B 53, R13257 (1996)Google Scholar
3. Pherson, C. D. Mac, Wolkow, R. A., Mitchell, C. E. J., and McLean, A. B., Phys. Rev. Let. 77, 691–694 (1996)Google Scholar
4. Shimomura, M., Sanada, N., Fukuda, Y., and Moller, P. J., Surf. Sci. 359, L451–L455 (1996)Google Scholar
5. Pahlke, D., Kinsky, J., Schultz, C., Pristovsek, M., Zom, M., Esser, N., and Richter, W., Phys. Rev. B 56, R1645–2276 (1997)Google Scholar
6. Resch, U., Esser, N., Raptis, Y. S., Richter, W., Wasserfall, J., Förster, A., and Westwood, D. I., Surf Sci. 269–70, 797 (1992)Google Scholar
7. Behrend, J., Wassermeier, M., Däweritz, L., and Ploog, K. H., Surf Sci. 342, 63–68 (1995)Google Scholar
8. Hannappel, T., Visbeck, S., Knorr, K., Mahrt, J., Zorn, M., Willig, F., Appl. Phys. A, accepted for publicationGoogle Scholar
9. Zettler, J. T., Progress in Crystal Growth & Characterization of Materials 35, 27–98 (1997)Google Scholar
10. Rüihle, W. and Klingenstein, W., Phys. Rev. B 18, 7011–7021 (1978)Google Scholar
11. Inoue, T., Kainosho, K., Hirano, R., Shimakura, H., Kanazawa, T., and Oda, O., J. Appl. Phys. 67, 7165–7168(1990)Google Scholar
12. Zom, M., Trepk, T., Zettler, J.-T., Junno, B., Meyne, C., Knorr, K., Wethkamp, T., Klein, M., Miller, M., Richter, W., and Samuelson, L., Appl. Phys. A 65, 333–339 (1997)Google Scholar
13. Hill, C. W., Stringfellow, G. B., and Sadwick, L. P., J. Cryst. Growth 181, 321–325 (1997).Google Scholar
14. Vogt, P., Hannappel, T., Visbeck, S., Knorr, K., Willig, F., Esser, N., and Richter, W., to be published in Phys. Rev. BGoogle Scholar
15. Li, L., Han, B.-K., Fu, Q., and Hicks, R. F., Phys. Rev. Lett. 82, 1879 (1999)Google Scholar