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Ultra-low Voltage, Self-aligned OTFTs for Frequency Applications

Published online by Cambridge University Press:  21 May 2013

Stefano Lai
Affiliation:
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d’Armi, 09123, Cagliari (Italy);
Piero Cosseddu
Affiliation:
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d’Armi, 09123, Cagliari (Italy); CNR – Institute of Nanoscience, S3 Centre, Via Campi 213A, 41100, Modena, Italy,
Gian Carlo Gazzadi
Affiliation:
CNR – Institute of Nanoscience, S3 Centre, Via Campi 213A, 41100, Modena, Italy,
Giovanni Martines
Affiliation:
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d’Armi, 09123, Cagliari (Italy);
Annalisa Bonfiglio
Affiliation:
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d’Armi, 09123, Cagliari (Italy); CNR – Institute of Nanoscience, S3 Centre, Via Campi 213A, 41100, Modena, Italy,
Massimo Barbaro
Affiliation:
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d’Armi, 09123, Cagliari (Italy);
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Abstract

A novel structure for Organic Thin-Film Transistor (OTFT) is here presented. The devices are fabricated using a one-mask, photolithographic self-alignment technique which can be performed with standard photoresists and without further chemical treatments. This technique, combined with a novel technology for the realization of low voltage OTFTs, allows a dramatic reduction of the parasitic capacitances thus leading to a remarkable cut-off frequency. In this paper, the main electrical parameters of low voltage, self-aligned devices are reported, and a complete frequency characterization of the devices is given. These characteristics make the reported approach suitable for the development of basic circuitries for frequency applications.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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