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Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications

Published online by Cambridge University Press:  14 March 2011

Hyungshin Kwon  and
Hyunsang Hwang
Hyungshin Kwon
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA, email: hwanghs@kjist.ac.kr
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA, email: hwanghs@kjist.ac.kr
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Abstract

The electrical and reliability characteristics of ultra-thin gate oxide, annealed in ND3 gas, have been investigated. Compared with a control oxide, which had been annealed in NH3, the ND3-nitrided oxide exhibits a significant reduction in charge trapping and interface state generation. The improvement of electrical and reliability characteristics can be explained by the strong Si-D bond at the Si/SiO2 interface. This nitridation process of gate dielectric using ND3 has considerable potential for future ultra large scaled integration (ULSI) device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C2.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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