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Ultraviolet Light Emitting Devices Using AlGdN

  • Takashi Kita (a1), Shinya Kitayama (a1), Tsuguo Ishihara (a2), Hirokazu Izumi (a2), Yoshitaka Chigi (a3), Tetsuro Nishimoto (a3), Hiroyuki Tanaka (a3) and Mikihiro Kobayashi (a3)...

We developed ultra-violet field-emission devices using rare-earth nitrides of Al1-xGdxN grown by a reactive radio-frequency magnetron sputtering technique. The Al1-xGdxN phosphor film excited by high-energy electrons shows a resolution limited, narrow intra-orbital luminescence from Gd3+ ions at 318 nm. The devise characteristics depend on injected current and acceleration voltage, which were analyzed by considering multiple excitation process of injected high-energy electrons.

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MRS Online Proceedings Library (OPL)
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  • EISSN: 1946-4274
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