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Undoped GaAs with a Low Electron Concentration Grown on Si by Mocvd

Published online by Cambridge University Press:  28 February 2011

Shinji Nozaki ,
A. T. Wu ,
J. J. Murray ,
T. George  and
M. Umeno
Shinji Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052
A. T. Wu
Affiliation:
Intel Corporation, Santa Clara, CA 95052
J. J. Murray
Affiliation:
Intel Corporation, Santa Clara, CA 95052
T. George
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
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Abstract

We have successfully grown undoped GaAs of very high resistivity on Si by MOCVD. The back and side edges of the Si substrate were coated with a Si3N4/SiO2 stacked layer to suppress Si incorporation Into GaAs by the gas phase transport mechanism during MOCVD growth. A 3- μm-thick GaAs layer was grown on this Si substrate at 750 °C in an atmospheric MOCVD reactor using the two-step growth technique. The electron concentration measured by a Polaron C-V profiler is 3xl0l4 cm−3, as low as that of GaAs grown on GaAs substrate, up to the depth of 1.5 μm from the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 213
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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