Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T09:51:11.263Z Has data issue: false hasContentIssue false
  • English
  • Français

The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride During Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Rachel E. Boekenhauer ,
Frederick S. Lauten  and
Brian W. Sheldon
Rachel E. Boekenhauer
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Frederick S. Lauten
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Get access

Abstract

Thin, disordered interlayers were used to enhance the nucleation of Si3N4. Continuous crystalline films were formed at relatively low temperatures (<1250°C) by using an amorphous, Sirich interlayer. The interlayer was produced by varying the CVD conditions (i.e., by using multistep processing). Samples were characterized with XPS, SEM, and TEM with concurrent EELS. The results indicate that the nucleation of crystalline material is very sensitive to the structure and composition of the disordered interlayers. Also, the structure and composition of the interlayers evolve during growth, such that crystalline material only nucleates when the interlayer provides favorable conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 107
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Doi, H., Kikuchi, N., Oosawa, Y., Mats. Sci. Eng. A105/106, 465 (1988).Google Scholar
2. Niihara, K. and Hirai, T., J. Mat. Sci.. 11, 593 (1976).Google Scholar
3. LeCoustumer, P., Monthioux, M. and Oberlin, A., J. Eur. Ceram. Soc. 11, 95 (1993).Google Scholar
4. Lauten, F.S. and Sheldon, B.W., to be submitted to J. Am. Ceram. Soc. Google Scholar
5. Lauten, F.S., Rankin, J., Sheldon, B.W., Mat. Res. Soc. Symp. Proc. 287, 315 (1993).Google Scholar
6. Lancin, M., Ramoul-Badache, K., Kihn, Y. and Sevely, J., Phil. Mag A 58, 667 (1988).Google Scholar
7. Sheldon, B.W. and Rankin, J., J. Am. Ceram. Soc. 78, 1624 (1995).Google Scholar
8. Repnikova, E.A., Gurtov, V.A., Panova, Z.V., Phys. Stat. Sol (A) 119, 113 (1990).Google Scholar