Hostname: page-component-cb9f654ff-9knnw Total loading time: 0 Render date: 2025-08-30T07:01:47.693Z Has data issue: false hasContentIssue false
  • English
  • Français

Use of isotopically pure silicon material to estimate silicon diffusivity in silicon dioxide

Published online by Cambridge University Press:  21 March 2011

D. Tsoukalas ,
C. Tsamis  and
P. Normand
D. Tsoukalas
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
C. Tsamis
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
P. Normand
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
Get access

Abstract

In this paper we report measurement of the silicon diffusion coefficient in silicon dioxide films using isotopically enriched 28Si silicon dioxide layers. 30Si atoms are introduced in excess in a stoichiometric isotopically pure silicon dioxide layer either by ion implantation or by a predeposition technique and the time evolution of the 30Si concentration profile under various thermal conditions is monitored using SIMS. The estimated diffusivity values are significantly higher than previouslyreported values for Si diffusion within a stoichiometric oxide and closer to reported values for excess Si diffusion within an oxide.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Brebec, G., Seguin, R., Sella, C., Bevenot, J., Martin, J.C., Acta Metallurgica 28, 327, (1980)Google Scholar
[2] Nesbit, L. A., Appl. Phys. Lett. 46, 38 (1985)Google Scholar
[3] Celler, G. K. and Trimble, L. E., Appl. Phys. Lett. 54, 1427 (1989)Google Scholar
[4] Tsoukalas, D., Tsamis, C. and Stoemenos, J., Appl. Phys. Lett. 63, 3169 (1993)Google Scholar
[5] Jaoul, O., Bejina, F., Elie, F., Abel, F., Phys. Rev. Lett. 74, 2038 (1995)Google Scholar
[6] Mikkelsen, J. C. Jr, Appl. Phys. Lett. 45, 1187 (1984)Google Scholar