Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-19T21:30:07.155Z Has data issue: false hasContentIssue false

The use of NiMnSb Heusler alloy in MBE Grown Tunnel Junction

Published online by Cambridge University Press:  17 March 2011

Pascal Turban
Affiliation:
ESRF, Grenoble, France
Stéphane Andrieu
Affiliation:
ESRF, Grenoble, France
Alberto Tagliaferri
Affiliation:
Laboratoire de Physique des Matériaux, CNRS / Univ H. Poincaré, Nancy, France
Céline De Nadai
Affiliation:
Laboratoire de Physique des Matériaux, CNRS / Univ H. Poincaré, Nancy, France
Nike Brookes
Affiliation:
Laboratoire de Physique des Matériaux, CNRS / Univ H. Poincaré, Nancy, France
Get access

Abstract

In this paper, the structural, magnetic and electronic properties of single-crystalline NiMnSb thin films grown by molecular beam epitaxy are presented. The growth process and surface morphology were studied by RHEED and STM. The structural quality of the films was investigated by EXAFS and HRTEM. For the optimized growth conditions, the expected NiMnSb C1b structure was obtained. Moreover, the most stable surface was found to be 4x1 reconstructed. The magnetic and electronic properties were studied by X-ray magnetic circular dichroïsm and spin-resolved x-ray photoemission spectroscopy experiments. The magnetization was observed to be essentially due to Mn, in agreement with theory. The surface was not found to be fully polarized but a polarization near 50% at room temperature was observed. Finally, the preparation of fully epitaxial NiMnSb/MgO/NiMnSb(001) trilayers is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jullière, M., Phys. Lett. A54, 225 (1975).Google Scholar
2. Park, J.H., Vescovo, E., Kim, H.J., Kwon, C., Ramesh, R., Venkatesan, T., Nature, 392, 794 (1998).Google Scholar
3. Viret, M., Drouet, M., Nassar, J., Contour, J.P., Fermon, C., Fert, A., Europhys.Lett., 39, 545 (1997).Google Scholar
4. Orgassa, D., Fujiwara, H., Schultess, T.C., Butler, W.H.,Phys. Rev. B60, 13237 (1999).Google Scholar
5. Wijs, G.A. de, Groot, R.A. de, Phys. Rev. B64, R020402 (2001).Google Scholar
6. See for instance Ristoiu, D., PhD thesis, Université J. Fourier, Grenoble, France (2000)Google Scholar
7. Roy, W. Van, Boeck, J. De, Brijs, B., Borghs, G.,Appl. Phys. Lett., 77, 4190 (2000).Google Scholar
8. Turban, P., Andrieu, S., Snoeck, E., Kierren, B., Teodorescu, C., J. Magn. Magn. Mater., (2001) in press, Appl. Phys. Lett., submitted to Phys. Rev. B.Google Scholar
9. Chen, C.T., Sette, F., Ma, Y., Modesti, S., Phys. Rev. B42, 7262 (1990).Google Scholar
10. Groot, R.A. de, Müller, F.M., Engen, P.G.van, Buschow, K.H.J., Phys.Rev.Lett. 50, 2024 (1983).G. Galanakis, S. Ostanin, M. Alouani, H. Dreyssé, J.M. Willis, Phys.Rev. B61, 4093, (2000).Google Scholar
11. Zhu, W., Sinkovic, B., Vescovo, E., Tanaka, C., Moodera, J.S., Phys. Rev. B64, 060403 (2001).Google Scholar