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Use of Rigorous Three-Dimensional Electromagnetic Simulation to Evaluate the Effectiveness of Optical Proximity Correction for Nonplanar Lithography

Published online by Cambridge University Press:  10 February 2011

M. S. Yeung  and
E. Barouch
M. S. Yeung
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, MA 02215
E. Barouch
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, MA 02215
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Abstract

A rigorous three-dimensional lithography simulator based on a recently developed single integral equation formulation for electromagnetic scattering is used in a simulation study of the effectiveness of using pre-distortions of mask patterns to compensate for linewidth variations in the resist patterns on nonplanar substrate topography. An efficient simulation methodology is used to reduce the number of required scattering calculations. Simulation results for different mask shapes and defocus conditions are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 173
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Wolf, E., Proc. Roy. Soc. A 253, 349 (1959);Google Scholar
Richards, R. and Wolf, E., Proc. Roy. Soc., 253, 358 (1959).Google Scholar
2. Yeung, M. S., in Proceedings of the SPIE, Vol. 922, pp. 149–167 (1988).Google Scholar
3. Yeung, M. S. and Barouch, E., in Proceedings of the SPIE, Vol. 3183, pp. 91–103 (1997).Google Scholar