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Use of Small Gate Voltage Pulses for the Extraction of the Interface Trap Densities in MOS Structures Using The Charge Pumping Technique

Published online by Cambridge University Press:  01 February 2011

Eugène Lin ,
Eric Moussy  and
Daniel Bauza
Eugène Lin
Affiliation:
Institut de Microélectronique, Electromagnétisme et Photonique, UMR CNRS 5130, INPG, ENSERG, 23, rue des Martyrs, BP 257, 38016 Grenoble Cedex 1, France.
Eric Moussy
Affiliation:
Institut de Microélectronique, Electromagnétisme et Photonique, UMR CNRS 5130, INPG, ENSERG, 23, rue des Martyrs, BP 257, 38016 Grenoble Cedex 1, France.
Daniel Bauza
Affiliation:
Institut de Microélectronique, Electromagnétisme et Photonique, UMR CNRS 5130, INPG, ENSERG, 23, rue des Martyrs, BP 257, 38016 Grenoble Cedex 1, France.
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Abstract

A general model for charge pumping is derived and is used for extracting interface trap densities using small gate voltage pulses. In MOS structures with ultrathin oxides, this strongly reduces the leakage current and prevents the oxide from any degradation. Interface trap densities from devices with oxides from 2.3 to 1.3 nm thick are reported for the first time.

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References

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