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Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

Published online by Cambridge University Press:  01 February 2011

Scott J. Jones
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
Joachim Doehler
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
Tongyu Liu
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
David Tsu
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
Jeff Steele
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
Rey Capangpangan
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
Masat Izu
Affiliation:
Energy Conversion Devices, Inc. Rochester Hills, MI 48309
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Abstract

New types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1For example, Arya, R.R., Oswald, R.S., Li, Y.M., Maley, N., Jansen, K., Yang, L., Chen, L.F., Willing, F., Bennett, M.S., Morris, J. and Carlson, D.E., 1st WCPEC conference, 394 (1994).Google Scholar
2 Hoffman, K. and Glatfelter, T., Proc. of 1993 IEEE Photovoltaics Spec. Conf., 986 (1993).Google Scholar
3 Jones, S. J., Tsu, D., Liu, T., Steele, J., Capangpangan, R. and Izu, M., Proc of Mat. Res. Soc. Amorphous and Nanocrystalline Silicon Science and Tech.–2004 (edited Ganguly, , Kondo, , Schiff, , Carius, , Biswas, ) 808, 599 (2004).10.1557/PROC-808-A9.44Google Scholar