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The Utility of Laser Light Scattering in Assessing the Mixability of Reagents for Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

Bin Ni ,
Gene P. Reck  and
James W. Proscia
Bin Ni
Affiliation:
Department of Chemistry, Wayne State University, Detroit, MI 48202
Gene P. Reck
Affiliation:
Department of Chemistry, Wayne State University, Detroit, MI 48202
James W. Proscia
Affiliation:
Ford Motor Company, Glass Division, Dearborn, MI 48120
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Abstract

The premixability of reagents used in chemical vapor deposition reactors is important to insure that gas feed lines and nozzles do not become clogged with particulates during operation. Even if reactants are to be kept separate until introduced into a reaction chamber, it is desirable to limit the number of particles formed. A reactor which utilizes laser light scattering to monitor particulate formation when gaseous reagents are mixed is described. The reaction of tin (IV) chloride with water is commonly used to produce tin oxide films by chemical vapor deposition. It was found by the light scattering experiment that at temperatures above about 110°C the number of particulates formed is greatly reduced. Therefore, it would be most desirable that these reagents be mixed above this temperature when depositing tin oxide from this reaction. The reaction of titanium tetrachloride with various amine was also investigated by this method. This reaction has been demonstrated to produce titanium nitride above 450°C. For each case, it was observed that there was a temperature above which the number of particulates was significantly reduced. This temperature was always below the optimal temperature for producing titanium nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 133
Copyright
Copyright © Materials Research Society 1994

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References

1. Eversteijn, F. C., Phillips Res. Rep., 26, 134 (1971).Google Scholar
2. Brekel, C. H. J. Van den and. Bollen, J. M., J. Cryst. Growth, 54, 310 (1981).CrossRefGoogle Scholar
3. Breiland, W. G.. and Ho, P., in Proceedings of the Ninth International Conference on Chemical Vapor Deposition, ed. Robinson, McD., Breckel, C. H. J. van den, Cullen, G. W., Blocher, J. M. Jr., and Rai-Choudhury, P., (The Electrochemical Society, Inc., Pennington, NJ, 1984), pp.44–59.Google Scholar
4. Kurtz, S. R. and Gordon, R. G., Thin Solid Films 140, 277 (1986).Google Scholar
5. Breiland, W.G. and Ho, P. in Chemical Vapor Deposition, Principles and Applications, ed. Hitchman, M. L. and Jensen, K. F., (Academic Press, New York, NY, 1993), pp. 91–158.Google Scholar
6. Proscia, J. W., Williams, K. B. and Reck, G. P., Abstact of Papers, Fourth Chemical Congree of North America, New York, NY, (American Chemical Society: Washington.DC; 1991); INOR 309.Google Scholar
7. Winter, C. H., Lewkebandara, T. S., Sheridan, P. H. and Proscia, J. W., Mat. Res. Soc. Symp. Proc. 282, 293 (1993).Google Scholar
8. Winter, C. H., Sheridan, P. H. Lewkebandara, T. S., Heeg, M. J. and Proscia, J. W., J. Am. Chem. Soc. 114, 1095 (1992).CrossRefGoogle Scholar