Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T20:02:47.025Z Has data issue: false hasContentIssue false
  • English
  • Français

Utilization of Photoconductive Gain in a-Si:H Devices for Radiation Detection

Published online by Cambridge University Press:  15 February 2011

H. K. Lee ,
J. S. Drewery ,
W. S. Hone ,
T. Jing ,
S. N. Kaplan  and
V. Perez-Mendez
H. K. Lee
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
W. S. Hone
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
Get access

Abstract

The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 μsec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 ∼ 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm2. Various gain results are discussed in terms of the device structure, applied bias and dark current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 767
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guang-Pu, W., Okamoto, H. and Hamakawa, Y., Jpn. J. Appl. Phys. 24, 1105 (1985)Google Scholar
2. Perez-Mendez, V., Morel, J., Kaplan, S. N. and Street, R. A., Nucl. Instr. and Meth. A 252, 478 (1987).Google Scholar
3. Perez-Mendez, V., in Amorphous & Microcrystalline Semiconductor Devices, edited by Kanicki, J. (Artech House, Boston, 1991), pp. 297–330.Google Scholar
4. Fujieda, I., Cho, G., Drewerey, J., Gee, T., Jing, T., Kaplan, S. N., Perez-Mendez, V. and Wildermuth, D., IEEE Trans. Nuc. Sci. NS–38, 255 (1991).Google Scholar
5. Lee, H. K., Drewery, J. S., Hong, W. S., Jing, T., Kaplan, S. N., Mireshghi, A. and Perez-Mendez, V., SPIE Proc. 2163, 427 (1994)Google Scholar
6. Williams, R. and Crandall, R. S., RCA Rev. 40, 371 (1979)Google Scholar
7. Hack, M., Shur, M. and Tsai, C. C., Appl. Phys. Lett. 54, 96 (1989)Google Scholar
8. Rubinelli, F. A., Hou, J. Y. and Fonash, S. J., J. Appl. Phys. 73, 2548 (1993)Google Scholar
9. Vanderhaghen, R., Amokrane, R., Han, D. and Silver, M., J. Non-Cryst. Solids 164–166, 599 (1993)Google Scholar
10. Hamano, T., Ito, H., Nakamura, T., Ozawa, T., Fuse, M. and Takenouchi, M., Jpn. J. Appl. Phys. 21, 245 (1982)Google Scholar
11. Kagawa, T., Matsumoto, N. and Kumabe, K., Jpn. J. Appl. Phys. 21, 251 (1982)Google Scholar
12. Steams, R. G. and Weisfield, R. L., Appl. Optics 31, 6874 (1992)Google Scholar
13. Rose, A., Concepts in Photoconductivity and Allied Problems, (Interscience Publishers, New York, 1963), p. 4.Google Scholar
14. Joshi, N. V., Phys. Rev. B, 27, 6272 (1983)Google Scholar